USB1Interfacial oxidation process for high-k
A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide oxynitride and/or nitride layer on a device region of a semiconductor substrate said interfacial layer having a thickness of less than 10 Å and (b) forming a high-k dielectric material on said interfacial oxide oxynitride and/or nitride layer said high-k
Get PriceImproved interfacial quality of GaAs metal-oxide
AbstracThe interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2 −/NH3-plasma are investigated showing that lower interface-state density (1.24 1012 cm− 2 eV− 1 near midgap) smaller gate leakage current density (1.34 10− 5 A/cm2 at
Get PriceSuppression of GeOx interfacial layer and enhancement of
the lack of high-quality and thermodynamically stable gate dielectrics is a major problem in implementing Ge and III–V semiconductors as the channel materials.5–10 For Ge it is diffi-cult to suppress the formation of a low-K germanium oxide (GeO x) interfacial layer (IL) at the high-K and Ge interface
Get PriceDevelopment of High-Quality Gate Oxide on 4H-SiC Using
A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O) inert (Ar) and reducing (H2 N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour.
Get PriceInterface studies of GaAs metal-oxide-semiconductor
mentary metal-oxide-semiconductor CMOS applications is the lack of high-quality thermodynamically stable insulators. Although in situ molecular beam expitaxy MBE Ga 2O 3 Gd 2O 3 and ex situ atomic-layer-deposited ALD Al 2O 3 show promising results 1–6 a direct ALD HfO 2 the high-k dielectric for Si CMOS at 45 nm node and beyond remains a
Get PriceE•ects of thin oxide in metal–semiconductor and metal
quality between the deposited metal and the semicon-ductor surface. It is well known that unless specially fabricated a Schottky barrier diode (SBD) possesses a thin interfacial native oxide layer between the metal and the semiconductor. The existence of such an insu-lating layer converts the metal–semiconductor (MS)
Get PriceUSB2Interfacial materials for use in
A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material forming a continuous interfacial material over the high-k dielectric material and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.
Get PriceA Low-Leakage Epitaxial High κ Gate Oxide for Germanium
ABSTRACT Germanium (Ge)-based metal−oxide−semi-conductor field-effect transistors are a promising candidate for high performance low power electronics at the 7 nm technology node and beyond. However the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT
Get PriceHigh-κ Complex Oxides for Advanced Gate Dielectric
A reliable interface between the high-κ oxide and semiconductor is crucial for good transistor performance. H igh-κ oxides suffer from lower carrier mobility degraded reliability and threshold voltage instability compared to silicon dioxide. High-κ binary oxides (HfO 2
Get PriceEnhanced Interfacial Integrity of Amorphous Oxide Thin
Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal–oxygen bond formation causing poor electrical performance and stability. Here we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via
Get PriceInterface studies of GaAs metal-oxide-semiconductor
mentary metal-oxide-semiconductor CMOS applications is the lack of high-quality thermodynamically stable insulators. Although in situ molecular beam expitaxy MBE Ga 2O 3 Gd 2O 3 and ex situ atomic-layer-deposited ALD Al 2O 3 show promising results 1–6 a direct ALD HfO 2 the high-k dielectric for Si CMOS at 45 nm node and beyond remains a
Get PriceMetal-Semiconductor Contacts
Metal-semiconductor contacts are an obvious component of any semiconductor device. At the same time such contacts cannot be assumed to have a resistance as low as that of two connected metals. In particular a large mismatch between the Fermi energy of the metal and semiconductor can result is a high-resistance rectifying contact.
Get PriceInterfacial engineering of metal-insulator-semiconductor
Jun 29 2017 · The high photovoltage was achieved by engineering the semiconductor–insulator and insulator–metal interfaces using a thin Al 2 O 3 dielectric layer to unpin the Si Fermi level and using a high
Get PriceSuppression of GeOx interfacial layer and enhancement of
the lack of high-quality and thermodynamically stable gate dielectrics is a major problem in implementing Ge and III–V semiconductors as the channel materials.5–10 For Ge it is diffi-cult to suppress the formation of a low-K germanium oxide (GeO x) interfacial layer (IL) at the high-K and Ge interface
Get PriceImproved interfacial quality of GaAs metal-oxide
The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N 2 −/NH 3-plasma are investigated showing that lower interface-state density (1.24 10 12 cm − 2 eV − 1 near midgap) smaller gate leakage current density (1.34 10 − 5 A/cm 2 at V fb 1 V) smaller capacitance equivalent
Get PriceEffective passivation and high-performance metalâ€"oxideâ
Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-j dielectrics on Ge without interfacial layers L.K. Chua R.L. Chua T.D. Lina evaluating the quality of oxide/semiconductor interface 20 . Gate length
Get PriceE•ects of thin oxide in metal–semiconductor and metal
quality between the deposited metal and the semicon-ductor surface. It is well known that unless specially fabricated a Schottky barrier diode (SBD) possesses a thin interfacial native oxide layer between the metal and the semiconductor. The existence of such an insu-lating layer converts the metal–semiconductor (MS)
Get Price"Investigation of Gate Dielectric Materials and Dielectric
High quality HfO2 films were grown using ALD on a chemical oxide. The dependence of interfacial quality on the thickness of the chemical oxide was studied. Finally I studied growth of HfO2 on two innovative interfacial layers an interfacial layer grown by in-situ ALD ozone/water cycle exposure and an interfacial layer of etched thermal and RTP
Get PriceGaAs metal-oxide-semiconductor capacitors using atomic
high-frequency C-V curves shown in Fig. 4 a .According to the cross-sectional HRTEM micrograph shown in Fig. 2 a 7 Å thick interfacial layer is discernible between HfO 2 and TaN metal gate. As a result the presence of this undesirable interfacial layer
Get Price(PDF) Oxygen Vacancies in High Dielectric Constant Oxide
The unique physical chemical and electronic properties of rare earth oxides have been of immense interest to replace SiO2 as a dielectric material in metal–oxide–semiconductor (MOS)-based
Get PriceInterfacial layer dependence on device property of high
Interfacial layer dependence on device property of high- TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness W. B. Chen and Albert China Department of Electronics Engineering National Chiao-Tung University Hsinchu 30010 Taiwan
Get PriceEffects of varying interfacial oxide and high-k layer
A metal-oxide-semiconductor capacitor and field effect transistor with a hafnium oxide (HfO2) dielectric have been fabricated. Various thicknesses of interfacial oxide and HfO2 film have been used. The results show that the flatband voltage changed due to the change in the physical thickness of the HfO2 film and not that of the interfacial oxide layer.
Get PriceChapter 7 Atomic-Layer Deposited High-k/III-V Metal-Oxide
7 Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices 175 reaction between GaAs and oxygen in the gas ambient is expected to form Ga-oxide As-oxide remaining elemental As and sometimes even a large amount of vacancies due to the high volatility of As.
Get PriceA Low-Leakage Epitaxial High κ Gate Oxide for Germanium
ABSTRACT Germanium (Ge)-based metal−oxide−semi-conductor field-effect transistors are a promising candidate for high performance low power electronics at the 7 nm technology node and beyond. However the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT
Get PriceAmorphous oxide alloys as interfacial layers with broadly
Jun 30 2015 · Microstructure oxygen environment and morphology determination for posttransition metal oxide semiconductor-based interfacial layer films. (A) Grazing incidence X-ray diffraction (GIXRD) of a-IGO and a-GZTO films as a function of composition. (B) Representative O1s XPS spectra of a-IGO and a-GZTO films as a function of composition.
Get PriceInterfacial engineering of metal-insulator-semiconductor
Jun 29 2017 · The high photovoltage was achieved by engineering the semiconductor–insulator and insulator–metal interfaces using a thin Al 2 O 3 dielectric layer to unpin the Si Fermi level and using a high
Get PriceInterfacial engineering of metal-insulator-semiconductor
Jun 29 2017 · The high photovoltage was achieved by engineering the semiconductor–insulator and insulator–metal interfaces using a thin Al 2 O 3 dielectric layer to unpin the Si Fermi level and using a high
Get PriceMetal oxide semiconducting interfacial layers for
Among the various interfacial materials used transition metal oxide semiconductors (MOS) are considered as potential candidates owing to their high environmental stability superior optical transparency and facile synthesis routes.
Get Price(PDF) Oxygen Vacancies in High Dielectric Constant Oxide
The unique physical chemical and electronic properties of rare earth oxides have been of immense interest to replace SiO2 as a dielectric material in metal–oxide–semiconductor (MOS)-based
Get PriceSuppression of GeOx interfacial layer and enhancement of
For high-performance nanoscale Ge-based transistors one important point of focus is interfacial germanium oxide (GeO x) which is thermodynamically unstable and easily desorbed.
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